Thulium-holmium doped fiber laser mode-locking with hafnium disulfide (HfS2) coated on D-shaped fiber. Two-dimensional materials under ion irradiation: from defect production to structure and property engineering. Mahdi Ghorbani-Asl, Silvan Kretschmer, Arkady V.Highly Sensitive and Fast Responsive Humidity Sensor based on 2D PtSe Shuvra Mondal, Bok Ki Min, Yoonsik Yi, Choon‐Gi Choi.Repairable Polymer Solid Electrolyte Gated MoSįield Effect Devices with Large Radiation Tolerance. Facebook gives people the power to share and makes the world more open and connected. Di Chen, Jiankun Li, Zheng Wei, Xinjian Wei, Maguang Zhu, Jing Liu, Guangyu Zhang, Zhiyong Zhang, Jian‐Hao Chen. Join Facebook to connect with Fet Elektronik and others you may know.Journal of Materials Science: Materials in Electronics 2022, 33 Isopropanol solvent-treated MoS2 nanosheets from liquid phase exfoliation and their applications to solution-processed anode buffer layer of organic light-emitting diode. Liming Liu, Wanshu Li, Liya Zeng, Yuehui Wang, Honghang Wang, Yu Miao, Lihui Wang, Zongliu Lu, Xiaowen Zhang.Solar Energy in Space Applications: Review and Technology Perspectives. Rosaria Verduci, Valentino Romano, Giuseppe Brunetti, Narges Yaghoobi Nia, Aldo Di Carlo, Giovanna D'Angelo, Caterina Ciminelli.The Journal of Physical Chemistry C 2021, 125 Irradiation-Induced Defects and Their Effects on the Electronic Structures in T-Carbon. Yu Cao, Chao Zhang, Yin Liu, Bing-Sheng Li, Zhi Gen Yu, Yong-Wei Zhang.Advances in Perovskites for Photovoltaic Applications in Space. Valentino Romano, Antonio Agresti, Rosaria Verduci, Giovanna D’Angelo.Our results demonstrate the extraordinary resistance of multilayer MoS 2 FETs under high irradiation conditions and expand their potential applications. The defect configuration is directly observed by aberration-corrected scanning transmission electron microscopy (AC-STEM). Raman and photoluminescence (PL) spectra indicate that the defect concentration in multilayer devices is less than that of single-layer devices, even if the irradiation dose is two orders of magnitude higher, since the displacement threshold energy of Mo and S atoms significantly increases with the increasing number of MoS 2 layers. Electrical measurements show that multilayer devices can withstand 3 × 10 12 cm –2 fluence of He ion irradiation, which is at least an order of magnitude higher than that of single-layer devices. Herein, the irradiation resistance of single-layer and multilayer MoS 2 field effect transistors (FETs) have been systematically studied by using 2 MeV He ions. However, in some particular working environments, such as space applications or advanced nuclear energy systems, device degradation caused by ion irradiation is a huge challenge for practical applications. Due to their small size and low power consumption, two-dimensional (2D) MoS 2 devices have emerged as attractive candidates for next-generation nanoelectronics.